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Краткое описание:
NPN Phototransistor 880nm 50V TO-18
Дополнительная информация
NPN phototransistor with a 50V collector-emitter breakdown voltage and 50mA maximum collector current. Features an 880nm wavelength, TO-18 package with a domed lens, and through-hole mounting. Operates across a temperature range of -40°C to 125°C with 220mW maximum power dissipation. Tin-matte contact plating and a silicon package material.
| RoHS | Compliant |
| Mount | Through Hole |
| Polarity | NPN |
| Packaging | Bulk |
| Lens Style | Domed |
| Wavelength | 880nm |
| Orientation | Top View |
| Package/Case | TO-18 |
| Viewing Angle | 80° |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Material | SILICON |
| Package Quantity | 1000 |
| Power Dissipation | 220mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 220mW |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 200mV |
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