CSD18503Q5A
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Краткое описание:
40V N-CH MOSFET, 100A, 4.3mR RdsOn, NexFET, VSON
Дополнительная информация
N-channel NexFET™ power MOSFET featuring 40V drain-to-source breakdown voltage and 4.3mΩ Rds On at 8V gate drive. This single MOSFET offers a continuous drain current of 100A and a maximum power dissipation of 120W. Packaged in a 5mm x 6mm SON (VSON) surface-mount package with tin plating, it operates from -55°C to 150°C. Key electrical characteristics include a 1.8V threshold voltage, 2.64nF input capacitance, and fast switching times with a 4.5ns turn-on delay and 2.6ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5mm |
| Height | 1.1mm |
| Length | 5.8mm |
| Series | NexFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 2.6ns |
| Packaging | Tape and Reel |
| Thickness | 1mm |
| Rds On Max | 4.3mR |
| Package/Case | VSON |
| RoHS Compliant | Yes |
| Contact Plating | Tin |
| Package Quantity | 2500 |
| Input Capacitance | 2.64nF |
| Power Dissipation | 3.1W |
| Threshold Voltage | 1.8V |
| Number of Channels | 1 |
| Turn-On Delay Time | 4.5ns |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 120W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.7mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain to Source Breakdown Voltage | 40V |
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