DMN3110S-7
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Краткое описание:
N-Channel JFET, 30V, 3.3A ID, 73mR Rds On, SOT-23
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, a single-element JFET designed for surface mounting in a SOT-23 package. Features a 30V drain-source voltage (Vdss) and a continuous drain current (ID) of 3.3A. Offers a low drain-source on-resistance (Rds On) of 73mR. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 740mW. Includes fast switching characteristics with a fall time of 2.5ns and turn-on delay time of 2.6ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 2.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 73mR |
| Package/Case | SOT-23 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 305.8pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 2.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13.1ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 740mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 73mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.3A |
| Drain to Source Voltage (Vdss) | 30V |
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