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Краткое описание:
PNP BJT Transistor, 50V, 0.2A, 200mW, Si, Surface Mount
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V collector-emitter voltage, 0.2A maximum DC collector current, and 200mW maximum power dissipation. Surface mountable in a 3-pin Mini3-G3-B plastic package with a 0.95mm pin pitch. Operates across a temperature range of -55°C to 150°C.
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| Type | PNP |
| EU RoHS | Yes |
| Category | Bipolar Small Signal |
| HTS Code | 8541210075 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | 61058 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541210080 |
| Package/Case | Mini3-G3-B |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Package Width (mm) | 1.5 |
| Package Height (mm) | 1.1 |
| Package Length (mm) | 2.9 |
| Minimum DC Current Gain | [email protected]@6V |
| Seated Plane Height (mm) | 1.1 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 200mW |
| Min Operating Temperature | -55°C |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 0.2A |
| Maximum Emitter Base Voltage | 6V |
| Maximum Transition Frequency | 150(Typ)MHz |
| Maximum Collector Base Voltage | 60V |
| Maximum Collector-Emitter Voltage | 50V |
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