FDA20N50F
Производится
Увеличить
Краткое описание:
500V 22A N-Channel MOSFET, 260mR Rds(on), TO-3P
Дополнительная информация
N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 22A continuous drain current. Offers 260mΩ maximum drain-source on-resistance. Designed with a TO-3P through-hole package, this single element MOSFET operates within a temperature range of -55°C to 150°C and boasts a maximum power dissipation of 388W. Includes fast switching characteristics with a 45ns turn-on delay and 60ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5mm |
| Height | 20.1mm |
| Length | 15.8mm |
| Series | UniFET™ |
| Weight | 6.401g |
| Polarity | N-CHANNEL |
| Fall Time | 60ns |
| Packaging | Rail/Tube |
| Rds On Max | 260mR |
| RoHS Compliant | Yes |
| Package Quantity | 30 |
| Input Capacitance | 3.39nF |
| Power Dissipation | 388W |
| Turn-On Delay Time | 45ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 100ns |
| Element Configuration | Single |
| Max Power Dissipation | 388W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 260mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 260MR |
| Drain to Source Breakdown Voltage | 500V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
