FDA24N50
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Краткое описание:
500V 24A N-Channel Power MOSFET, 190mR RdsOn, TO-3P
Дополнительная информация
N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 24A continuous drain current. Offers a low 190mΩ drain-source on-resistance and 270W maximum power dissipation. This single-element MOSFET operates with a 5V threshold voltage and includes fast switching characteristics with a 47ns turn-on delay. Packaged in TO-3P for through-hole mounting, it is RoHS compliant and operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5mm |
| Height | 20.1mm |
| Length | 15.8mm |
| Series | UniFET™ |
| Weight | 6.401g |
| Polarity | N-CHANNEL |
| Fall Time | 86ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Package Quantity | 30 |
| Input Capacitance | 4.15nF |
| Power Dissipation | 270W |
| Threshold Voltage | 5V |
| Number of Elements | 1 |
| Turn-On Delay Time | 47ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 164ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 270W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 190mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 190MR |
| Drain to Source Breakdown Voltage | 500V |
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