FDB024N04AL7

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FDB024N04AL7 - Onsemi
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Краткое описание: N-Channel MOSFET 40V 219A 2.4mR TO-263-8 SMT
Производитель Onsemi
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel MOSFET, 40V Drain-Source Breakdown Voltage, 219A Continuous Drain Current, and 2.4mΩ Drain-Source Resistance. Features a 17ns turn-on delay and 17ns fall time, with 7.3nF input capacitance. This surface mount component operates from -55°C to 175°C with a maximum power dissipation of 214W. Packaged on an 800-piece tape and reel in a TO-263-8 package.
RoHS Compliant
Mount Surface Mount
Width 4.3mm
Height 9.4mm
Length 10.8mm
Series PowerTrench®
Weight 1.312g
Polarity N-CHANNEL
Fall Time 17ns
Packaging Tape and Reel
Rds On Max 2.4mR
Package/Case TO-263-8
RoHS Compliant Yes
Package Quantity 800
Input Capacitance 7.3nF
Power Dissipation 214W
Threshold Voltage 1V
Turn-On Delay Time 17ns
Radiation Hardening No
Turn-Off Delay Time 71ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 214W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 2mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 219A
Drain to Source Voltage (Vdss) 40V
Drain to Source Breakdown Voltage 40V

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