FDD6N20TM
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Краткое описание:
N-Channel MOSFET, 200V, 4.5A, 800mR, DPAK, Surface Mount
Дополнительная информация
N-Channel Power MOSFET featuring 200V drain-to-source breakdown voltage and 4.5A continuous drain current. Surface mountable in a DPAK package, this UniFET™ offers a maximum drain-to-source on-resistance of 800mΩ. Key switching characteristics include a 12.8ns fall time and 8.3ns turn-on delay. Operating temperature range spans from -55°C to 150°C with a maximum power dissipation of 40W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | UniFET™ |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 12.8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 800mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 230pF |
| Power Dissipation | 40W |
| Threshold Voltage | 5V |
| Turn-On Delay Time | 8.3ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 40W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 800mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 800mR |
| Drain to Source Breakdown Voltage | 200V |
