FDS6681Z
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Краткое описание:
30V P-CH MOSFET, 20A, 4.6mΩ, SOIC, Tape & Reel
Дополнительная информация
P-Channel MOSFET, Surface Mount, SOIC package. Features 30V drain-source voltage, 20A continuous drain current, and low 4.6mΩ drain-source on-resistance. Operates from -55°C to 150°C with a maximum power dissipation of 2.5W. Includes 20ns turn-on delay and 660ns turn-off delay. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | PowerTrench® |
| Weight | 0.13g |
| Polarity | P-CHANNEL |
| Fall Time | 380ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4.6mR |
| Nominal Vgs | 1.8V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| Current Rating | -20A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Package Quantity | 2500 |
| Input Capacitance | 7.54nF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 1.8V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 660ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.8mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 4.6MR |
| Drain to Source Breakdown Voltage | -30V |
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