FDT439N
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N-Channel MOSFET, 30V, 6.3A, 45mΩ, SOT-223, Surface Mount
Дополнительная информация
N-Channel MOSFET, 30V Drain-Source Breakdown Voltage, 6.3A Continuous Drain Current, and 45mΩ Maximum Drain-Source On Resistance. This single-element, surface-mount transistor features a 670mV Threshold Voltage and a 2.5V specified enhancement mode. It offers a 6ns Turn-On Delay Time and 30ns Turn-Off Delay Time, with a 3W Maximum Power Dissipation. Packaged in a SOT-223 case on a 4000-piece tape and reel, this RoHS compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.56mm |
| Height | 1.6mm |
| Length | 6.5mm |
| Weight | 0.2502g |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 45mR |
| Nominal Vgs | 670mV |
| Termination | SMD/SMT |
| Package/Case | SOT-223 |
| Current Rating | 6.3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 500pF |
| Power Dissipation | 3W |
| Threshold Voltage | 670mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 6ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 38mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 6.3A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 45mR |
| Drain to Source Breakdown Voltage | 30V |
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