FMMT551TA

Производится
FMMT551TA - Diodes
Увеличить
Краткое описание: PNP BJT Transistor, 60V, 1A, 150MHz, SOT-23
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Silicon Bipolar Junction Transistor in a SOT-23 package. Features a 60V collector-emitter breakdown voltage (VCEO) and a continuous collector current of -1A. Offers a maximum power dissipation of 500mW and a transition frequency of 150MHz. Operates across a temperature range of -55°C to 200°C, with a collector-emitter saturation voltage of -350mV. Surface mountable with RoHS compliance.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1.1mm
Length 3mm
Weight 0.000282oz
Polarity PNP
Frequency 150MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23
Max Frequency 150MHz
Current Rating -1A
RoHS Compliant Yes
DC Rated Voltage -60V
Package Quantity 3000
Power Dissipation 500mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 150MHz
Max Breakdown Voltage 60V
Max Collector Current 1A
Max Power Dissipation 500mW
Gain Bandwidth Product 150MHz
Max Operating Temperature 200°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -1A
Collector Base Voltage (VCBO) 80V
Collector-emitter Voltage-Max 350mV
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage -350mV

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.