FMMT6520TA
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PNP BJT Transistor, 350V, 500mA, SOT-23, 50MHz
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) in a SOT-23 package. Features a 350V Collector-Emitter Breakdown Voltage (V(BR)CEO) and a 350V Collector Base Voltage (VCBO). Offers a continuous collector current of -500mA and a maximum power dissipation of 330mW. Operates across a temperature range of -55°C to 150°C with a gain bandwidth product of 50MHz. Surface mountable, RoHS compliant, and supplied in tape and reel packaging.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3.05mm |
| Weight | 0.000282oz |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Max Frequency | 50MHz |
| Current Rating | -500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -350V |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 50MHz |
| Max Breakdown Voltage | 350V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 330mW |
| Gain Bandwidth Product | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -500mA |
| Collector Base Voltage (VCBO) | 350V |
| Collector-emitter Voltage-Max | 1V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | -1V |
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