FQD11P06TM
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Краткое описание:
P-Channel MOSFET, -60V, -9.4A, 185mR, DPAK, Surface Mount
Дополнительная информация
P-channel Power MOSFET featuring a -60V drain-source breakdown voltage and a continuous drain current of 9.4A. This surface-mount device offers a maximum drain-source on-resistance of 185mΩ. Operating within a temperature range of -55°C to 150°C, it boasts a 38W maximum power dissipation and a 550pF input capacitance. Packaged in DPAK for tape and reel, this RoHS compliant component is designed for efficient power switching applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.1mm |
| Height | 2.3mm |
| Length | 6.6mm |
| Series | QFET® |
| Weight | 0.26037g |
| Polarity | P-CHANNEL |
| Fall Time | 45ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 185mR |
| Package/Case | DPAK |
| Current Rating | -9.4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 2500 |
| Input Capacitance | 550pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | -4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 6.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 38W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 185mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 9.4A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 185mR |
| Drain to Source Breakdown Voltage | -60V |
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