FQD2N100TM
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N-Channel MOSFET, 1kV, 1.6A, 9 Ohm, DPAK, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, QFET® series, featuring a 1000V drain-source breakdown voltage and 1.6A continuous drain current. This surface-mount device in a DPAK package offers a maximum drain-source on-resistance of 9Ω and a 900V DC rating. With a 5V threshold voltage and 50W maximum power dissipation, it operates from -55°C to 150°C. The component includes fast switching characteristics with turn-on delay time of 13ns and fall time of 35ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.1mm |
| Height | 2.3mm |
| Length | 6.6mm |
| Series | QFET® |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 9R |
| Nominal Vgs | 5V |
| Package/Case | DPAK |
| Current Rating | 1.6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 900V |
| Package Quantity | 2500 |
| Input Capacitance | 520pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 50W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.1R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 1.6A |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 9R |
| Drain to Source Breakdown Voltage | 1kV |
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