FQD7N10LTM
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Краткое описание:
N-Channel MOSFET, 100V, 5.8A, 350mR, Logic Level, DPAK
Дополнительная информация
N-Channel Power MOSFET, Logic Level, QFET® series, featuring 100V drain-source breakdown voltage and 5.8A continuous drain current. Offers a maximum drain-source on-resistance of 350mΩ. Surface mountable in a DPAK package, this single-element transistor operates from -55°C to 150°C with a 25W maximum power dissipation. Includes fast switching characteristics with turn-on delay of 9ns and fall time of 50ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.1mm |
| Height | 2.3mm |
| Length | 6.6mm |
| Series | QFET® |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 50ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 350mR |
| Package/Case | DPAK |
| Current Rating | 5.8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 1 |
| Input Capacitance | 290pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 17ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 350mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.8A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 350mR |
| Drain to Source Breakdown Voltage | 100V |
