FQD7N30TM
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N-Channel MOSFET, 300V, 5.5A, 700mR, DPAK, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, QFET™ series, featuring a 300V drain-source breakdown voltage and a continuous drain current of 5.5A. This surface-mount device offers a low drain-source on-resistance of 700mΩ. Designed for efficient switching, it exhibits turn-on delay time of 13ns and fall time of 35ns. Packaged in DPAK for tape and reel deployment, it operates within a temperature range of -55°C to 150°C and boasts a maximum power dissipation of 2.5W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.1mm |
| Height | 2.3mm |
| Length | 6.6mm |
| Series | QFET™ |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 700mR |
| Package/Case | DPAK |
| Current Rating | 5.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 300V |
| Package Quantity | 2500 |
| Input Capacitance | 610pF |
| Power Dissipation | 2.5W |
| Number of Elements | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Element Configuration | Single |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 700mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Voltage (Vdss) | 300V |
| Drain-source On Resistance-Max | 700mR |
| Drain to Source Breakdown Voltage | 300V |
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