FQP30N06L
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Краткое описание:
N-Channel MOSFET, 60V, 32A, 35mΩ, TO-220
Дополнительная информация
N-channel Power MOSFET, Logic Level, 60V Drain-Source Breakdown Voltage, 32A Continuous Drain Current, and 35mΩ Max Drain-Source On-Resistance. Features a TO-220AB package for through-hole mounting, 79W max power dissipation, and operates from -55°C to 175°C. Includes 1.04nF input capacitance and fast switching times with 15ns turn-on delay. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 16.3mm |
| Length | 10.67mm |
| Series | QFET® |
| Weight | 1.8g |
| Polarity | N-CHANNEL |
| Fall Time | 110ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 35mR |
| Nominal Vgs | 2.5V |
| Package/Case | TO-220AB |
| Current Rating | 32A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 50 |
| Input Capacitance | 1.04nF |
| Power Dissipation | 79W |
| Threshold Voltage | 2.5V |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 79W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 27mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 32A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 35mR |
| Drain to Source Breakdown Voltage | 60V |
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