FQP6N90C
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Краткое описание:
900V N-Channel Power MOSFET, 6A, 2.3 Ohm, TO-220
Дополнительная информация
N-channel Power MOSFET featuring 900V drain-source breakdown voltage and 6A continuous drain current. This QFET® series component offers a maximum drain-source on-resistance of 2.3Ω at a nominal gate-source voltage of 5V. Designed for through-hole mounting in a TO-220AB package, it boasts a maximum power dissipation of 167W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a turn-on delay of 35ns and a fall time of 60ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.4mm |
| Length | 10.1mm |
| Series | QFET® |
| Weight | 1.8g |
| Polarity | N-CHANNEL |
| Fall Time | 60ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 2.3R |
| Nominal Vgs | 5V |
| Termination | Through Hole |
| Package/Case | TO-220AB |
| Current Rating | 6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 900V |
| Package Quantity | 50 |
| Input Capacitance | 1.77nF |
| Power Dissipation | 167W |
| Threshold Voltage | 5V |
| Number of Elements | 1 |
| Turn-On Delay Time | 35ns |
| Dual Supply Voltage | 900V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 55ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 167W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.3R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 900V |
| Drain-source On Resistance-Max | 2.3R |
| Drain to Source Breakdown Voltage | 900V |
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