FZT968TA
Производится
Увеличить
Краткое описание:
PNP BJT Transistor, 6A, 12V, 80MHz, SOT-223
Дополнительная информация
PNP silicon bipolar junction transistor for surface mount applications. Features a 12V collector-emitter breakdown voltage, 6A continuous collector current, and 80MHz gain bandwidth product. This 1-element transistor offers a maximum power dissipation of 3W and operates within a temperature range of -55°C to 150°C. Packaged in a SOT-223 case, it is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | PNP |
| Frequency | 80MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| Max Frequency | 80MHz |
| Current Rating | -6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -12V |
| Package Quantity | 1000 |
| Power Dissipation | 3W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 80MHz |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 6A |
| Max Power Dissipation | 3W |
| Gain Bandwidth Product | 80MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -6V |
| Continuous Collector Current | -6A |
| Collector Base Voltage (VCBO) | 15V |
| Collector-emitter Voltage-Max | 450mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | -360mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
