IMH11AT110
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NPN BJT Transistor, 50V, 100mA, 250MHz, SMD
Дополнительная информация
NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage (VCEO) and a 50mA continuous collector current. Operates with a 5V emitter-base voltage (VEBO) and offers a minimum DC current gain (hFE) of 30. Packaged in a compact SC-74 surface-mount device (SMD/SMT) with dimensions of 3mm (length) x 1.8mm (width) x 1.2mm (height). RoHS compliant with a maximum power dissipation of 300mW and a transition frequency of 250MHz.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.8mm |
| Height | 1.2mm |
| Length | 3mm |
| hFE Min | 30 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SMD/SMT |
| Current Rating | 50mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 3000 |
| Power Dissipation | 300mW |
| Max Output Current | 100mA |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 300mW |
| Operating Supply Voltage | 50V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 100mA |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
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