IMH1AT110
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NPN BJT Transistor, 50V, 100mA, 250MHz, SMD
Дополнительная информация
NPN bipolar junction transistor designed for small signal applications. Features a 50V collector-emitter breakdown voltage and a 100mA continuous collector current. Operates with a minimum hFE of 56 and a transition frequency of 250MHz. Packaged in an SC-74, 6-pin surface-mount device, this silicon transistor offers a maximum power dissipation of 300mW and operates across a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 56 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SMD/SMT |
| Current Rating | 30mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 3000 |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 300mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Continuous Collector Current | 100mA |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
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