IMT3AT108
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Краткое описание:
PNP BJT Transistor, 50V VCEO, 150mA IC, 140MHz, 2-Element, SMD
Дополнительная информация
PNP Silicon Bipolar Junction Transistor for small signal applications. Features a 50V collector-emitter breakdown voltage and 150mA maximum collector current. Operates with a 140MHz transition frequency and a minimum hFE of 120. Housed in a 6-pin SC-74 surface mount package, this RoHS compliant component offers a wide operating temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 120 |
| Polarity | PNP |
| Frequency | 140MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SMD/SMT |
| Current Rating | -150mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -50V |
| Package Quantity | 3000 |
| Power Dissipation | 300mW |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 140MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Power Dissipation | 300mW |
| Gain Bandwidth Product | 140MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -6V |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -500mV |
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