IPD50N06S4L08ATMA2
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Краткое описание:
50A 60V N-Channel MOSFET TO-252 7.8mR RDS(on)
Дополнительная информация
N-channel power MOSFET featuring 60V drain-source voltage and 50A continuous drain current. This surface-mount device offers a low 7.8mΩ on-state resistance and 71W power dissipation. Designed for automotive applications with AEC-Q101 qualification, it operates from -55°C to 175°C and includes fast switching characteristics with an 8ns fall time and 9ns turn-on delay. The TO-252 package ensures efficient thermal management.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Weight | 0.139332oz |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 7.8mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 4.78nF |
| Power Dissipation | 71W |
| Number of Channels | 1 |
| Turn-On Delay Time | 9ns |
| On-State Resistance | 7.8mR |
| Turn-Off Delay Time | 45ns |
| Max Power Dissipation | 71W |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 60V |
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