IPP040N06N
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Краткое описание:
N-CH Power MOSFET 60V 80A TO-220 Through Hole
Дополнительная информация
N-channel enhancement mode power MOSFET in a TO-220 package, designed for automotive applications. Features a maximum drain-source voltage of 60V and a continuous drain current of 80A. Offers low on-resistance of 4mΩ at 10V Vgs and a typical gate charge of 38nC. Operates across a wide temperature range from -55°C to 175°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| Jedec | TO-220AB |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | CG091 |
| Pin Count | 3 |
| Automotive | Yes |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220 |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Width (mm) | 4.4 |
| Process Technology | OptiMOS |
| Package Description | Transistor Outline Package |
| Package Height (mm) | 9.25 |
| Package Length (mm) | 10 |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 3000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 38nC |
| Typical Gate Charge @ Vgs | 38@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Threshold Voltage | 2.8(Typ)V |
| Maximum Drain Source Resistance | 4@10VmOhm |
| Typical Input Capacitance @ Vds | 2700@30VpF |
| Maximum Continuous Drain Current | 80A |
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