IRF3205ZSPBF
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Краткое описание:
N-Channel MOSFET, 55V, 110A, 6.5mR, D2PAK, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, 55V Drain-Source Voltage, 75A Continuous Drain Current, and 6.5mΩ On-State Resistance. This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor features a TO-263AB (D2PAK) surface-mount package, 170W maximum power dissipation, and operates from -55°C to 175°C. It offers fast switching speeds with turn-on delay of 18ns and turn-off delay of 45ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Series | HEXFET® Series |
| Polarity | N-CHANNEL |
| Fall Time | 67ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Nominal Vgs | 4V |
| Package/Case | D2PAK |
| Current Rating | 75A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 55V |
| Package Quantity | 50 |
| Input Capacitance | 3.45nF |
| Power Dissipation | 170W |
| Number of Elements | 1 |
| Turn-On Delay Time | 18ns |
| Dual Supply Voltage | 55V |
| On-State Resistance | 6.5mR |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 170W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 6.5MR |
| Drain to Source Breakdown Voltage | 55V |
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