IRF510SPBF
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Краткое описание:
N-Channel MOSFET, 100V, 5.6A, 540mR Rds On, D2PAK
Дополнительная информация
N-Channel Power MOSFET, surface mountable in a D2PAK package. Features a 100V drain-source voltage and 5.6A continuous drain current. Offers a low 540mΩ drain-source on-resistance at a nominal 4V gate-source voltage. Operates from -55°C to 175°C with a maximum power dissipation of 3.7W. Includes fast switching characteristics with turn-on delay of 6.9ns and fall time of 9.4ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 9.4ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 540mR |
| Nominal Vgs | 4V |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 180pF |
| Power Dissipation | 3.7W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 6.9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.7W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 540mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.6A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 540mR |
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