IRF7342PBF
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Краткое описание:
P-Channel MOSFET, 55V, 3.4A, 105mR, SOIC, 2-Element
Дополнительная информация
Dual P-channel MOSFET featuring 55V drain-source voltage and 3.4A continuous drain current. Offers a low 105mΩ maximum drain-source on-resistance. Operates with a gate-source voltage up to ±20V and a nominal Vgs of -1V. This surface-mount SOIC package component has a maximum power dissipation of 2W and a maximum operating temperature of 150°C. Includes fast switching characteristics with turn-on delay of 14ns and fall time of 22ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Fall Time | 22ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Nominal Vgs | -1V |
| Row Spacing | 6.3mm |
| Package/Case | SOIC |
| Current Rating | -3.4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -55V |
| Input Capacitance | 690pF |
| Power Dissipation | 2W |
| Number of Elements | 2 |
| Turn-On Delay Time | 14ns |
| Turn-Off Delay Time | 43ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.4A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 105mR |
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