IRF7820PBF
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Краткое описание:
N-Channel MOSFET, 200V, 3.7A, 78mR, SOIC, Surface Mount
Дополнительная информация
N-Channel MOSFET, a single-element silicon Metal-Oxide Semiconductor Field-Effect Transistor, offers a 200V Drain to Source Breakdown Voltage and 3.7A Continuous Drain Current. Featuring a low 78mΩ Drain to Source Resistance (Rds On Max) and a nominal Vgs of 4V, this surface mount device operates within a -55°C to 150°C temperature range. It boasts fast switching characteristics with a 7.1ns Turn-On Delay Time and 12ns Fall Time, packaged in a compact 5mm x 4mm x 1.5mm SOIC (SOP-8) with lead-free construction.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | HEXFET® |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 78mR |
| Nominal Vgs | 4V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 95 |
| Input Capacitance | 1.75nF |
| Power Dissipation | 2.5W |
| Number of Elements | 1 |
| Turn-On Delay Time | 7.1ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 78mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain to Source Breakdown Voltage | 200V |
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