IRF840LCLPBF
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Краткое описание:
N-Channel MOSFET, 500V, 8A, 850mR, TO-262
Дополнительная информация
N-Channel Power MOSFET with 500V Drain-Source Voltage (Vdss) and 8A Continuous Drain Current (ID). Features 0.85ohm Drain-Source On-Resistance (Rds On) and 3.1W Max Power Dissipation. This silicon Metal-Oxide-Semiconductor FET is housed in a TO-262-3 package for through-hole mounting. It offers fast switching characteristics with a 12ns turn-on delay and 19ns fall time, operating within a -55°C to 150°C temperature range. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.65mm |
| Length | 10.41mm |
| Weight | 0.084199oz |
| Polarity | N-CHANNEL |
| Fall Time | 19ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 850mR |
| Package/Case | TO-262-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 1.1nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 27ns |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 850mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 500V |
