IRF9540PBF
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Краткое описание:
P-CH MOSFET -100V 19A 200mR TO-220AB
Дополнительная информация
P-channel MOSFET transistor for through-hole mounting in a TO-220AB package. Features a continuous drain current of 19A and a drain-source breakdown voltage of -100V. Offers a maximum drain-source on-resistance of 200mR at a nominal gate-source voltage of -4V. Operates across a temperature range of -55°C to 175°C with a maximum power dissipation of 150W. Includes fast switching characteristics with turn-on delay time of 16ns and fall time of 57ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.01mm |
| Length | 10.41mm |
| Weight | 0.211644oz |
| Polarity | P-CHANNEL |
| Fall Time | 57ns |
| Packaging | Rail/Tube |
| Rds On Max | 200mR |
| Nominal Vgs | -4V |
| Package/Case | TO-220AB |
| Polarization | P |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Package Quantity | 1000 |
| Input Capacitance | 1.4nF |
| Power Dissipation | 150W |
| Threshold Voltage | -4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 16ns |
| Turn-Off Delay Time | 34ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 150W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 200mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 19A |
| Drain to Source Voltage (Vdss) | -100V |
| Drain-source On Resistance-Max | 200mR |
| Drain to Source Breakdown Voltage | -100V |
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