IRFBC20SPBF
Производится
Увеличить
Краткое описание:
600V 2.2A N-Channel MOSFET, 4.4R Rds On, TO-263
Дополнительная информация
N-Channel Power MOSFET, 600V Vdss, 2.2A continuous drain current, and 4.4 ohm Rds On Max. This silicon Metal-oxide Semiconductor FET features a D2PAK-3 package for surface mounting, with a maximum power dissipation of 3.1W and an operating temperature range of -55°C to 150°C. Key switching characteristics include a 10ns turn-on delay, 30ns turn-off delay, and 25ns fall time, with an input capacitance of 350pF. This RoHS compliant component is lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 4.4R |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 350pF |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.4R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 4.4R |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
