IRFD9020PBF
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Краткое описание:
P-CH MOSFET, 60V, 1.6A, 280mR, Through Hole DIP
Дополнительная информация
P-channel power MOSFET with a 60V drain-source breakdown voltage and 1.6A continuous drain current. Features a low 280mΩ drain-source on-resistance and a threshold voltage of -4V. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 1.3W. Packaged in a through-hole DIP for general-purpose power applications.
| RoHS | Compliant |
| Mount | Through Hole |
| Polarity | P-CHANNEL |
| Fall Time | 29ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 280mR |
| Package/Case | DIP |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 570pF |
| Power Dissipation | 1.3W |
| Threshold Voltage | -4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 280mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.6A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 280mR |
| Drain to Source Breakdown Voltage | 60V |
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