IRFR420TRLPBF
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Краткое описание:
N-Channel MOSFET, 500V, 2.4A, 3R Rds On, DPAK
Дополнительная информация
N-Channel Power MOSFET, 500V Vdss, 2.4A continuous drain current, and 3 Ohm drain-source on-resistance. Features 8ns turn-on delay and 33ns turn-off delay, with a 16ns fall time. Operates from -55°C to 150°C with a maximum power dissipation of 2.5W. Packaged in a TO-252AA (DPAK) surface-mount package, this silicon Metal-oxide Semiconductor FET is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 16ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3R |
| Nominal Vgs | 2V |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 360pF |
| Power Dissipation | 2.5W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 33ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.4A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 3R |
