IRFR9310TRLPBF
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Краткое описание:
P-Channel MOSFET, 400V, 1.8A, 7R, TO-252
Дополнительная информация
P-channel power MOSFET with 400V drain-source voltage and 1.8A continuous drain current. Features 7 Ohm drain-source resistance (Rds On Max) and 50W maximum power dissipation. This silicon, metal-oxide semiconductor FET is housed in a TO-252-3 surface-mount package with a 2.39mm height, 6.73mm length, and 6.22mm width. Operates from -55°C to 150°C, with turn-on delay of 11ns and turn-off delay of 25ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 24ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 7R |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 270pF |
| Power Dissipation | 50W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Max Power Dissipation | 50W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Voltage (Vdss) | 400V |
