IRFU220PBF
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Краткое описание:
N-Channel Power MOSFET, 200V, 4.8A, 800mR, TO-251
Дополнительная информация
N-channel power MOSFET, TO-251 package, featuring 200V drain-source voltage and 4.8A continuous drain current. Offers 800mΩ maximum drain-source on-resistance and 4V threshold voltage. Designed for general-purpose power applications with a maximum power dissipation of 2.5W. RoHS compliant with a 150°C maximum operating temperature.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.38mm |
| Height | 6.22mm |
| Length | 6.73mm |
| Weight | 0.01164oz |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 800mR |
| Package/Case | TO-251-3 |
| Current Rating | 4.8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 3000 |
| Input Capacitance | 260pF |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Turn-On Delay Time | 7.2ns |
| Turn-Off Delay Time | 19ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 800mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.8A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 800mR |
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