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Краткое описание:
P-CH MOSFET 60V 5.1A 500mR TO-251AA
Дополнительная информация
P-channel MOSFET transistor featuring a -60V drain-source breakdown voltage and 5.1A continuous drain current. This through-hole mounted component offers a maximum drain-source on-resistance of 500mR at a nominal gate-source voltage of -4V. Operating across a temperature range of -55°C to 150°C, it has a power dissipation of 2.5W and a 270pF input capacitance. The TO-251AA package is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.39mm |
| Height | 6.22mm |
| Length | 6.73mm |
| Weight | 0.01164oz |
| Polarity | P-CHANNEL |
| Fall Time | 31ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 500mR |
| Lead Length | 9.65mm |
| Nominal Vgs | -4V |
| Package/Case | TO-251AA |
| Polarization | P |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 270pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | -4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 9.6ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 500mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.1A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 500mR |
| Drain to Source Breakdown Voltage | -60V |
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