IXTP76P10T
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Краткое описание:
P-CH MOSFET 100V 76A TO-220 TrenchP Through Hole
Дополнительная информация
P-channel enhancement mode power MOSFET in a TO-220 package, featuring a 100V drain-source voltage and 76A continuous drain current. This single-element transistor utilizes TrenchP process technology for efficient power handling. With a low drain-source on-resistance of 25mΩ at 10V, it offers excellent conductivity. The component supports through-hole mounting and operates across a wide temperature range from -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| PPAP | No |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| Mounting | Through Hole |
| Cage Code | 75915 |
| Pin Count | 3 |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | TO-220 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Width (mm) | 4.83(Max) |
| Process Technology | TrenchP |
| Package Height (mm) | 9.15(Max) |
| Package Length (mm) | 10.66(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 298000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 197nC |
| Typical Gate Charge @ Vgs | 197@10VnC |
| Maximum Gate Source Voltage | ±15V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Drain Source Resistance | 25@10VmOhm |
| Typical Input Capacitance @ Vds | 13700@25VpF |
| Maximum Continuous Drain Current | 76A |
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