MAX2601ESA+
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Краткое описание:
RF Transistor NPN 1GHz 17V 1.2A SOIC Surface Mount
Дополнительная информация
RF BJT NPN transistor for high-frequency applications, operating up to 1GHz. Features a 17V collector-emitter voltage, 1.2A max collector current, and 100 minimum hFE. This surface mount component is housed in an 8-pin SOIC package, offering a power dissipation of 6.4W and a gain of 11.6dB. Designed for operation between 3V and 3.6V supply voltage, with a temperature range of -40°C to 85°C.
| Gain | 11.6dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.99mm |
| Height | 1.58mm |
| Length | 4.98mm |
| Weight | 0.019048oz |
| hFE Min | 100 |
| Polarity | NPN |
| Packaging | Rail/Tube |
| Package/Case | SOIC |
| Max Frequency | 1GHz |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 6.4W |
| Max Supply Voltage | 3.6V |
| Min Supply Voltage | 3V |
| Operating Frequency | 900 MHz |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Transition Frequency | 1GHz |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 1.2A |
| Max Power Dissipation | 6.4W |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Emitter Base Voltage (VEBO) | 2.3V |
| Continuous Collector Current | 200mA |
| Collector Base Voltage (VCBO) | 15V |
| Collector-emitter Voltage-Max | 17V |
| Collector Emitter Breakdown Voltage | 15V |
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