MJD117T4G

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MJD117T4G - Onsemi
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Краткое описание: PNP Darlington Transistor 100V 2A DPAK 1.75W 25MHz
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Darlington Bipolar Junction Transistor (BJT) in a DPAK package. Features a 100V collector-emitter breakdown voltage and a continuous collector current of 2A. Offers a maximum power dissipation of 1.75W and a minimum hFE of 1000. Operates across a temperature range of -65°C to 150°C. RoHS and Halogen Free compliant.
RoHS Compliant
Width 6.22mm
Height 2.38mm
Length 6.73mm
hFE Min 1000
Polarity PNP
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case DPAK
Current Rating 2A
RoHS Compliant Yes
DC Rated Voltage -100V
Package Quantity 1
Power Dissipation 20W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 25MHz
Max Breakdown Voltage 100V
Max Collector Current 2A
Max Power Dissipation 1.75W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 2A
Collector Base Voltage (VCBO) 100V
Collector-emitter Voltage-Max 3V
Collector Emitter Voltage (VCEO) 100V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2V