MJD122T4

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MJD122T4 - Stmicroelectronics
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Краткое описание: NPN BJT 100V 8A 20W TO-252 Surface Mount Darlington Transistor
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) in a TO-252 surface mount package. Features a 100V collector-emitter breakdown voltage and a 5A continuous collector current rating, with a peak rating of 8A. Offers a maximum power dissipation of 20W and a minimum hFE of 100. Operates across a temperature range of -65°C to 150°C. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 6.2mm
Height 2.4mm
Length 6.6mm
Weight 0.063493oz
hFE Min 100
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Package/Case TO-252
Current Rating 5A
RoHS Compliant Yes
DC Rated Voltage 100V
Package Quantity 2500
Power Dissipation 20W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Max Breakdown Voltage 100V
Max Collector Current 8A
Max Power Dissipation 20W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 100V
Collector-emitter Voltage-Max 4V
Collector Emitter Voltage (VCEO) 100V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2V