MJD3055T4
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NPN BJT Transistor, 60V, 10A, 2MHz, TO-252, Surface Mount
Дополнительная информация
NPN bipolar junction transistor (BJT) in a TO-252 surface-mount package. Features a 60V collector-emitter breakdown voltage and a 10A maximum collector current. Offers a 1.1V collector-emitter saturation voltage and a 2MHz transition frequency. Operates from -65°C to 150°C with a 20W maximum power dissipation. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| hFE Min | 20 |
| Polarity | NPN |
| Frequency | 2MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-252 |
| Max Frequency | 2MHz |
| Current Rating | 10A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Power Dissipation | 20W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 2MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 10A |
| Max Power Dissipation | 20W |
| Gain Bandwidth Product | 2MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 70V |
| Collector-emitter Voltage-Max | 8V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1.1V |
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