EMD22T2R
Производится
Увеличить
Краткое описание:
50V 100mA NPN/PNP BJT Transistor, 250MHz, SMD
Дополнительная информация
Dual NPN/PNP bipolar junction transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage (VCEO) and a continuous collector current of 100mA. Offers a minimum hFE of 80 and a transition frequency of 250MHz. Packaged in an SMD/SMT EMT6 6-pin surface mount package, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 150mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 80 |
| Polarity | NPN, PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SMD/SMT |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| Package Quantity | 8000 |
| Power Dissipation | 150mW |
| Max Output Current | 100mA |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 150mW |
| Operating Supply Voltage | 50V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Continuous Collector Current | 100mA |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
