MJD350T4

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MJD350T4 - Stmicroelectronics
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Краткое описание: PNP BJT 300V 500mA DPAK Power Transistor
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) for power applications. Features a 300V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current rating of 500mA. Housed in a DPAK surface-mount package, this transistor offers a maximum power dissipation of 15W and operates within a temperature range of -65°C to 150°C. It is RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 6.2mm
Height 2.4mm
Length 6.6mm
hFE Min 30
Polarity PNP
Lead Free Lead Free
Packaging Tape and Reel
Package/Case DPAK
Current Rating -500mA
RoHS Compliant Yes
DC Rated Voltage -300V
Package Quantity 1
Power Dissipation 15W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Max Breakdown Voltage 300V
Max Collector Current 500mA
Max Power Dissipation 15W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 3V
Collector Base Voltage (VCBO) 300V
Collector-emitter Voltage-Max 300V
Collector Emitter Voltage (VCEO) 300V
Collector Emitter Breakdown Voltage 300V

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