MMBT5179

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MMBT5179 - Onsemi
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Краткое описание: RF NPN BJT Transistor 12V 50mA 2GHz SOT-23
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN RF BJT transistor in SOT-23 package for surface mount applications. Features a 12V collector-emitter voltage (VCEO), 50mA continuous collector current, and a 2GHz transition frequency. Offers a minimum gain (hFE) of 25 and a gain bandwidth product of 2GHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 225mW. Packaged in tape and reel.
Gain 15dB
RoHS Compliant
Mount Surface Mount
Width 1.3mm
Height 0.93mm
Length 2.92mm
Weight 0.03g
hFE Min 25
Polarity NPN
Frequency 2GHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23
Max Frequency 2GHz
Current Rating 50mA
RoHS Compliant Yes
DC Rated Voltage 12V
Package Quantity 3000
Power Dissipation 225mW
Number of Elements 1
Operating Frequency 2000 MHz
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 2GHz
Max Breakdown Voltage 12V
Max Collector Current 50mA
Max Power Dissipation 225mW
Gain Bandwidth Product 2GHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 2.5V
Continuous Collector Current 50mA
Collector Base Voltage (VCBO) 20V
Collector-emitter Voltage-Max 12V
Collector Emitter Voltage (VCEO) 12V
Collector Emitter Breakdown Voltage 12V
Collector Emitter Saturation Voltage 400mV

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