MMBTH10LT1G
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Краткое описание:
NPN RF Transistor 25V 650MHz SOT-23 SMD
Дополнительная информация
NPN RF Bipolar Junction Transistor in SOT-23-3 package, featuring a 25V collector-emitter breakdown voltage and a 650MHz transition frequency. This surface-mount device offers a maximum collector current of 4mA and a power dissipation of 300mW. Key specifications include a 500mV collector-emitter saturation voltage and a minimum hFE of 60. Operating across a temperature range of -55°C to 150°C, this RoHS and Halogen Free component is supplied on tape and reel.
| RoHS | Compliant |
| Width | 1.4mm |
| Height | 1.01mm |
| Length | 3.04mm |
| hFE Min | 60 |
| Polarity | NPN |
| Frequency | 650MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Halogen Free | Halogen Free |
| Package/Case | SOT-23-3 |
| Max Frequency | 650MHz |
| Current Rating | 4mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 25V |
| Package Quantity | 3000 |
| Power Dissipation | 300mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 650MHz |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 4mA |
| Max Power Dissipation | 225mW |
| Gain Bandwidth Product | 650MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 3V |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 25V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 500mV |
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