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PNP BJT Transistor, 80V, 500mA, 50MHz, SOT-323
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a continuous collector current of -500mA and a collector-emitter breakdown voltage of 80V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 50MHz. Packaged in an ultra-small, 3-lead plastic SOT-323 surface mount package, this component is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| Weight | 0.000212oz |
| hFE Min | 100 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-323 |
| Current Rating | -500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -40V |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 50MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -4V |
| Continuous Collector Current | -500mA |
| Collector Base Voltage (VCBO) | -80V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -250mV |
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