NDC7003P
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Краткое описание:
Dual P-Channel JFET, -60V, -0.34A, 5Ω, SOT-23, Tape & Reel
Дополнительная информация
Dual P-Channel Enhancement Mode Field Effect Transistor designed for switching applications. Features a -60V drain-to-source breakdown voltage and a continuous drain current of 340mA. Offers a maximum drain-source on-resistance of 5 Ohms. Packaged in a SOT-23 surface-mount configuration, this component operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.7mm |
| Height | 1mm |
| Length | 3mm |
| Series | PowerTrench® |
| Weight | 0.036g |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 5R |
| Nominal Vgs | -1.9V |
| JESD-30 Code | R-PDSO-G6 |
| Package/Case | SOT-23 |
| Package Shape | Rectangular |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Current Rating | -220mA |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| RoHS Compliant | Yes |
| Terminal Finish | Tin |
| DC Rated Voltage | -50V |
| Package Quantity | 3000 |
| Input Capacitance | 66pF |
| Power Dissipation | 960mW |
| Terminal Position | DUAL |
| Threshold Voltage | -1.9V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 3.2ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 8ns |
| Reach SVHC Compliant | No |
| Element Configuration | Dual |
| Max Power Dissipation | 960mW |
| Package Body Material | Plastic |
| Transistor Application | SWITCHING |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.2R |
| Moisture Sensitivity Level | 1 |
| Transistor Element Material | SILICON |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 340mA |
| Peak Reflow Temperature (Cel) | 260°C |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 5R |
| Drain to Source Breakdown Voltage | -60V |
