NDT014L
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N-Ch MOSFET, 60V, 2.8A, 160mR, SOT-223, Logic Level
Дополнительная информация
N-Channel MOSFET, logic-level enhancement mode, 60V Drain-Source Breakdown Voltage, 2.8A continuous drain current, and 160mΩ maximum drain-source on-resistance. Features include a 1.5V nominal gate-source voltage, 214pF input capacitance, and fast switching times with 6ns turn-on and 15ns turn-off delay. This surface-mount transistor is housed in a SOT-223 package, rated for 3W power dissipation, and operates from -55°C to 150°C. It is RoHS compliant and available on a 4000-piece tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.7mm |
| Length | 6.7mm |
| Weight | 0.188g |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 160mR |
| Nominal Vgs | 1.5V |
| Termination | SMD/SMT |
| Package/Case | SOT-223 |
| Current Rating | 2.8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Input Capacitance | 214pF |
| Power Dissipation | 3W |
| Threshold Voltage | 1.5V |
| Number of Elements | 1 |
| Turn-On Delay Time | 6ns |
| Dual Supply Voltage | 60V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 170mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.8A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 160mR |
| Drain to Source Breakdown Voltage | 60V |
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