NJVMJD42CT4G

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NJVMJD42CT4G - Onsemi
Краткое описание: PNP BJT 100V 6A DPAK Power Transistor
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Power Transistor, DPAK package, rated for 6A continuous collector current and 100V collector-emitter breakdown voltage. Features a maximum collector-emitter saturation voltage of 1.5V and a minimum DC current gain (hFE) of 30. Operates across a wide temperature range from -65°C to 150°C, with a maximum power dissipation of 1.75W. This RoHS compliant component is supplied on a 2500-piece tape and reel, suitable for automotive applications.
RoHS Compliant
Width 6.22mm
Height 2.38mm
Length 6.73mm
Series Automotive, AEC-Q101
hFE Min 30
Polarity PNP
Lead Free Lead Free
Packaging Tape and Reel
Package/Case DPAK
Max Frequency 1MHz
RoHS Compliant Yes
Package Quantity 2500
Radiation Hardening No
Transition Frequency 3MHz
Max Breakdown Voltage 100V
Max Collector Current 6A
Max Power Dissipation 1.75W
Gain Bandwidth Product 3MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 100V
Collector-emitter Voltage-Max 1.5V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 1.5V

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