FJB102TM

Производится
FJB102TM - Onsemi
Увеличить
Краткое описание: 100V 8A NPN BJT Transistor, D2PAK, 80W, Tape & Reel
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for high-voltage power applications. Features a 100V Collector-Emitter Voltage (VCEO) and 100V Collector Base Voltage (VCBO). Offers a maximum collector current of 8A and a minimum hFE of 200. Packaged in a D2PAK surface-mount case, supplied on an 800-piece tape and reel. Maximum power dissipation is 80W, with an operating temperature range of -65°C to 150°C. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Weight 1.31247g
hFE Min 200
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Package/Case D2PAK
Current Rating 8A
RoHS Compliant Yes
DC Rated Voltage 100V
Package Quantity 800
Power Dissipation 80W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Max Breakdown Voltage 100V
Max Collector Current 8A
Max Power Dissipation 80W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 100V
Collector-emitter Voltage-Max 2.5V
Collector Emitter Voltage (VCEO) 100V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2V